crystal layer growth

基本解释

Concentration boundary layer is an important subject in discussion of interfacial transfer phenomena in crystal growth.
浓度边界层是晶体生长过程中分析界面输运现象的重要元素。
The main structure changes in the creep process were fiber rearrangement, the oxidation of the C-rich interfacial layer and crystal growth within the matrix.
蠕变过程中出现的主要结构变化为纤维重排、富碳界面层的氧化以及基质中晶体的生长。
We focused on the relationship between crystal growth and the interface-layer adsorptive layer and transitive layer of interface-phase . Furthermore, we put forward the interface-phase m…
重点论述了界面相中的界面层、吸附层和过渡层与晶体生长的关系，并进一步提出了晶体生长的界面相模型。