surface recombination velocity

基本解释

Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
When the surface hole recombination velocity and defect density is bigger, the length of nanowire should not be too long.
当表面复合速率和体缺陷密度较大时，纳米柱的长度不宜过大。
Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片表面复合速度增加。